Features
- This unique free application is for all students across the world. It covers 141 topics of Fundamentals of Electronics Devices in detail. These 141 topics are divided in 5 units.
- Each topic is around 600 words and is complete with diagrams, equations and other forms of graphical representations along with simple text explaining the concept in detail.
- This USP of this application is "ultra-portability". Students can access the content on-the-go from anywhere they like.
- Basically, each topic is like a detailed flash card and will make the lives of students simpler and easier.
- Some of topics Covered in this application are:
- 1. Transient and a-c conditions: time variation of stored charge
- 2. Photodiode
- 3. P-N-P-N diode
- 4. Semiconductor Controlled Rectifier
- 5. Light Emitting Diode
- 6. Tunnel Diode
- 7. TRIAC
- 8. DIAC
- 9. Insulated Gate Bipolar Transistor
- 10. GUNN diode- Basic Principle
- 11. GUNN diode-The Transferred Electron Mechanism
- 12. PNPN diode- Forward Blocking & conducting mode
- 13. Solar Cell- Working Principle
- 14. Solar Cell- I-V Characterstics
- 15. Rectifiers
- 16. The Breakdown Diode
- 17. Photodetectors
- 18. Photodiode Equations
- 19. PIN PHOTODIODE
- 20. Avalanche Photodiode
- 21. Light Emitting Materials
- 22. IMPATT diode
- 23. IMPATT diode operation
- 24. Semiconductor lasers
- 25. Semiconductor lasers- Under forward biased
- 26. Heterojunction Lasers Operation
- 27. Metal semiconductor field effect transistors (MESFET)
- 28. MESFET- The High Electron Mobility Transistor (HEMT)
- 29. The Metal Insulator Semiconductor FET (MISFET)
- 30. MISFET under different operating condition
- 31. The Ideal MOS Capacitor
- 32. MOSFET: Effects of Real Surfaces
- 33. MOSFET: Interface Charge
- 34. MOSFET: Threshold Voltage
- 35. MOS Capacitance Voltage Analysis
- 36. MOSFET: Time-Dependent Capacitance Measurements
- 37. Current-Voltage Characteristics of MOS Gate Oxides
- 38. The MOSFET
- 39. MOSFET: Output Characteristics
- 40. Conductance and Transconductance of the MOSFET
- 41. MOSFET: Transfer Characteristics
- 42. MOSFET: Mobility Models
- 43. MOSFET: Effective transverse field
- 44. Short Channel MOSFET l-V Characteristics
- 45. MOSFET: Control of Threshold Voltage
- 46. MOSFET: Threshold Adjustment by Ion Implantation
- 47. MOSFET: Substrate Bias Effects
- 48. MOSFET: Sub threshold Characteristics
- 49. Equivalent Circuit for the MOSFET
- 50. MOSFET Scaling and Short channel effect
- 51. MOSFET: Hot carrier effects
- 52. MOSFET: Drain-Induced Barrier Lowering
- 53. Short Channel Effect and Narrow Width Effect of MOSFET
- 54. Gate-Induced Drain Leakage in MOSFET
- 55. FUNDAMENTALS OF BJT OPERATION
- 56. BJT: Summary of hole and electron flow in a transistor
- 57. FUNDAMENTALS OF BJT OPERATION: PN junction
- 58. AMPLIFICATION WITH BJTS
- 59. EQUILIBRIUM CONDITIONS: The Contact Potential
- 60. Equilibrium Fermi Levels
- 61. Space Charge at a Junction
- 62. OPTICAL ABSORPTION
- 63. OPTICAL ABSORPTION EXPERIMENT
- 64. LUMINESCENCE
- 65. Photoluminescence
- 66. Carrier Lifetime And Photoconductivity: direct recombination
- 67. Indirect Recombination: Trapping
- 68. Steady State Carrier Generation: Quasi-Fermi Levels
- 69. Photoconductive Devices
- 70. DIFFUSION OF CARRIERS: Diffusion Processes
- 71. Diffusion and Drift of Carriers: Built-in Fields
- 72. The Einstein Relation
- 73. The Continuity Equation
- 74. Steady State Carrier Injection and Diffusion Length
- 75. The Haynes-Shockley Experiment
- 76. Gaussian distribution
- 77. Gradients in the Quasi-Fermi Levels
- 78. SEMICONDUCTOR MATERIALS
- 79. CRYSTAL LATTICES: Periodic Structures
- 80. Cubic Lattices Structures
- 81. Planes and Directions: Miller indices
- 82. The Diamond Lattice
- 83. Bonding Forces in Solids
- 84. Energy Bands
- 85. Linear combinations of the individual atomic orbitals (LCAO)
- 86. Metals, Semiconductors, and Insulators
- 87. Direct and Indirect Semiconductors
- 88. Variation of Energy Bands with Alloy Composition
- 89. Charge Carriers In Semiconductors: Electrons and Holes
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Details were last updated on Oct 28, 2024 16:00 +08.