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Features
- !!!!!!! Free version of this app is also available on same store...........
- This ultimate application is for all engineering students across the world. It covers 169 topics of Advance Semiconductor Devices in detail. These 169 topics are divided in 5 units.
- Each topic is around 600 words and is complete with diagrams, equations and other forms of graphical representations along with simple text explaining the concept in detail.
- This USP of this application is "ultra-portability". Students can access the content on-the-go from anywhere they like.
- Basically, each topic is like a detailed flash card and will make the lives of students simpler and easier.
- Some of topics Covered in this application are:
- 1. The Haynes-Shockley Experiment
- 2. Semiconductor Materials
- 3. Crystal Lattice
- 4. Cubic Lattices
- 5. Planes and Directions
- 6. The Diamond Lattice
- 7. Bulk Crystal Growth
- 8. Growth of Single Crystal Ingots
- 9. Wafers
- 10. Epitaxial growth
- 11. Vapor-phase epitaxy
- 12. Molecular beam epitaxy
- 13. Charge Carriers in Semiconductors
- 14. Effective Mass
- 15. Intrinsic Material
- 16. Extrinsic Material
- 17. Electrons and Holes in Quantum Wells
- 18. The Fermi Level
- 19. Compensation and Space Charge Neutrality
- 20. Drift and Resistance
- 21. Optical absorption
- 22. Photoluminescence
- 23. Electroluminescence
- 24. Carrier Lifetime and Photoconductivity
- 25. Direct Recombination of Electrons and Holes
- 26. Indirect Recombination; Trapping
- 27. Steady State Carrier Generation; Quasi-Fermi Levels
- 28. Photoconductive Devices
- 29. Diffusion Processes
- 30. Diffusion and Drift of Carriers: Built-in Fields
- 31. Diffusion and Recombination; The Continuity Equation
- 32. Steady State Carrier Injection: Diffusion Length
- 33. Gradients in the Quasi-Fermi Levels
- 34. Temperature Dependence of Carrier Concentrations
- 35. Effects of Temperature and Doping on Mobility
- 36. High-Field Effects
- 37. The Hall Effect
- 38. Fabrication of p-n Junctions: Thermal oxidation
- 39. Diffusion of P-N junction
- 40. Rapid Thermal Processing
- 41. Ion Implantation
- 42. Chemical Vapor Deposition (CVD)
- 43. Photolithography
- 44. Etching
- 45. Metallization
- 46. Equilibrium Conditions
- 47. Equilibrium Fermi Levels
- 48. Space Charge at a Junction
- 49. Forward- and Reverse-Biased Junctions
- 50. Carrier Injection
- 51. Reverse Bias
- 52. Reverse-Bias Breakdown
- 53. Zener Breakdown
- 54. Avalanche Breakdown
- 55. Rectifiers
- 56. The Breakdown Diode
- 57. Transient and A-C Conditions
- 58. Reverse Recovery Transient
- 59. The Ideal Diode Model
- 60. Effects of Contact Potential on Carrier Injection
- 61. Switching Diodes
- 62. Capacitance of p-n junctions
- 63. Recombination and Generation in the Transition Region
- 64. Ohmic Losses
- 65. Graded Junctions
- 66. Metal semiconductor junctions: schottky barriers
- 67. Current Transport Processes
- 68. Thermionic-Emission Theory
- 69. Diffusion Theory
- 70. Thermionic-Emission-Diffusion Theory
- 71. Rectifying Contacts
- 72. Tunneling Current
- 73. Minority-Carrier Injection
- 74. MIS Tunnel Diode
- 75. Measurement of Barrier Height
- 76. Activation-Energy Measurement
- 77. Photoelectric Measurement
- 78. Ohmic Contacts
- 79. Typical Schottky Barriers
- 80. Heterojunctions
- 81. Tunnel Diodes
- 82. Construction of Tunnel Diodes
- 83. The Backward Diode
- 84. MIM tunnel diode
- 85. Structure of resonant-tunneling diode
- 86. I-V characteristics of resonant-tunneling diode
- 87. Photodiodes
- 88. The Varactor Diode
- 89. Current and Voltage in an Illuminated Junction
- 90. Solar Cell- Working Principle
- 91. Solar Cell- I-V Characterstics
- 92. Photodetectors
- 93. Gain, Bandwidth, and Signal-to-Noise Ratio of photodetector
- 94. Light Emitting Diodes
- 95. Light Emitting Materials
- 96. Fiber-Optic Communications
- 97. Semiconductor lasers
- 98. Population Inversion at a Junction
- 99. Emission Spectra for p-n Junction Lasers
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Details were last updated on Dec 24, 2024 18:22 +08.
