Advanced Semiconductor Devices

Features

• !!!!!!! Free version of this app is also available on same store...........
• This ultimate application is for all engineering students across the world. It covers 169 topics of Advance Semiconductor Devices in detail. These 169 topics are divided in 5 units.
• Each topic is around 600 words and is complete with diagrams, equations and other forms of graphical representations along with simple text explaining the concept in detail.
• This USP of this application is "ultra-portability". Students can access the content on-the-go from anywhere they like.
• Basically, each topic is like a detailed flash card and will make the lives of students simpler and easier.
• Some of topics Covered in this application are:
• 1. The Haynes-Shockley Experiment
• 2. Semiconductor Materials
• 3. Crystal Lattice
• 4. Cubic Lattices
• 5. Planes and Directions
• 6. The Diamond Lattice
• 7. Bulk Crystal Growth
• 8. Growth of Single Crystal Ingots
• 9. Wafers
• 10. Epitaxial growth
• 11. Vapor-phase epitaxy
• 12. Molecular beam epitaxy
• 13. Charge Carriers in Semiconductors
• 14. Effective Mass
• 15. Intrinsic Material
• 16. Extrinsic Material
• 17. Electrons and Holes in Quantum Wells
• 18. The Fermi Level
• 19. Compensation and Space Charge Neutrality
• 20. Drift and Resistance
• 21. Optical absorption
• 22. Photoluminescence
• 23. Electroluminescence
• 24. Carrier Lifetime and Photoconductivity
• 25. Direct Recombination of Electrons and Holes
• 26. Indirect Recombination; Trapping
• 27. Steady State Carrier Generation; Quasi-Fermi Levels
• 28. Photoconductive Devices
• 29. Diffusion Processes
• 30. Diffusion and Drift of Carriers: Built-in Fields
• 31. Diffusion and Recombination; The Continuity Equation
• 32. Steady State Carrier Injection: Diffusion Length
• 33. Gradients in the Quasi-Fermi Levels
• 34. Temperature Dependence of Carrier Concentrations
• 35. Effects of Temperature and Doping on Mobility
• 36. High-Field Effects
• 37. The Hall Effect
• 38. Fabrication of p-n Junctions: Thermal oxidation
• 39. Diffusion of P-N junction
• 40. Rapid Thermal Processing
• 41. Ion Implantation
• 42. Chemical Vapor Deposition (CVD)
• 43. Photolithography
• 44. Etching
• 45. Metallization
• 46. Equilibrium Conditions
• 47. Equilibrium Fermi Levels
• 48. Space Charge at a Junction
• 49. Forward- and Reverse-Biased Junctions
• 50. Carrier Injection
• 51. Reverse Bias
• 52. Reverse-Bias Breakdown
• 53. Zener Breakdown
• 54. Avalanche Breakdown
• 55. Rectifiers
• 56. The Breakdown Diode
• 57. Transient and A-C Conditions
• 58. Reverse Recovery Transient
• 59. The Ideal Diode Model
• 60. Effects of Contact Potential on Carrier Injection
• 61. Switching Diodes
• 62. Capacitance of p-n junctions
• 63. Recombination and Generation in the Transition Region
• 64. Ohmic Losses
• 65. Graded Junctions
• 66. Metal semiconductor junctions: schottky barriers
• 67. Current Transport Processes
• 68. Thermionic-Emission Theory
• 69. Diffusion Theory
• 70. Thermionic-Emission-Diffusion Theory
• 71. Rectifying Contacts
• 72. Tunneling Current
• 73. Minority-Carrier Injection
• 74. MIS Tunnel Diode
• 75. Measurement of Barrier Height
• 76. Activation-Energy Measurement
• 77. Photoelectric Measurement
• 78. Ohmic Contacts
• 79. Typical Schottky Barriers
• 80. Heterojunctions
• 81. Tunnel Diodes
• 82. Construction of Tunnel Diodes
• 83. The Backward Diode
• 84. MIM tunnel diode
• 85. Structure of resonant-tunneling diode
• 86. I-V characteristics of resonant-tunneling diode
• 87. Photodiodes
• 88. The Varactor Diode
• 89. Current and Voltage in an Illuminated Junction
• 90. Solar Cell- Working Principle
• 91. Solar Cell- I-V Characterstics
• 92. Photodetectors
• 93. Gain, Bandwidth, and Signal-to-Noise Ratio of photodetector
• 94. Light Emitting Diodes
• 95. Light Emitting Materials
• 96. Fiber-Optic Communications
• 97. Semiconductor lasers
• 98. Population Inversion at a Junction
• 99. Emission Spectra for p-n Junction Lasers

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